1/6 EMIF10-1K010F1 ? august 2003 - ed: 4a iec61000-4-2 level 4 15kv (air discharge) 8 kv (contact discharge) mil std 883e - method 3015-6 class 3 complies with the following standards: flip chip package a b c d e 1 2 3 4 5 010 08 06 04 02 09 07 05 03 01 i10 i8 i6 i4 i2 i9 gnd gnd i5 i1 i7 gnd gnd i3 pin configuration (ball side) n emi symmetrical (i/o) low-pass filter n high efficiency in emi filtering n very low pcb space consuming: 2.57mm x 2.57mm n very thin package: 0.65 mm n high efficiency in esd suppression n high reliability offered by monolithic integration n high reducing of parasitic elements through in- tegration & wafer level packaging. benefits 10 lines emi filter and esd protection ipad tm where emi filtering in esd sensitive equipment is required : n mobile phones and communication systems n computers, printers and mcu boards main product characteristics: the EMIF10-1K010F1 is a highly integrated devices designed to suppress emi/rfi noise in all systems subjected to electromagnetic interferences. the emif10 flip chip packaging means the package size is equal to the die size. this filter includes an esd protection circuitry which prevents the device from destruction when subjected to esd surges up 15kv. description tm : ipad is a trademark of stmicroelectronics. input gnd gnd gnd output low-pass filter ri/o = 1k cline = 100pf w basic cell configuration
EMIF10-1K010F1 2/6 v i v rm pp i rm i v br r i v cl 1.0m 3.0m 10.0m 30.0m 100.0m 300.0m 1.0g - 50.00 - 45.00 - 40.00 - 35.00 - 30.00 - 25.00 - 20.00 - 15.00 - 10.00 - 5.00 0.00 db f/hz 1.0m 3.0m 10.0m 30.0m 100.0m 300.0m 1.0g - 50.00 - 45.00 - 40.00 - 35.00 - 30.00 - 25.00 - 20.00 - 15.00 - 10.00 - 5.00 0.00 db aplac measure fig. 1: s21(db) attenuation measurement and aplac simulation. 1 10 100 1,000 -100 -80 -60 -40 -20 0 frequency (mhz) fig. 2: analog crosstalk measurements. symbol parameter and test conditions value unit t j junction temperature 125 c t op operating temperature range -40 to + 85 c t stg storage temperature range -55 to +150 c absolute maximum ratings (t amb =25c) symbol parameters v br breakdown voltage i rm leakage current @ v rm v rm stand-off voltage v cl clamping voltage r d dynamic impedance i pp peak pulse current r i/o series resistance between input & output c in input capacitance per line electrical characteristics (t amb = 25c) symbol test conditions min typ max unit v br i r = 1ma 6 8 10 v i rm v rm = 3v per line 500 na r i/o 900 1000 1100 w c line at 0v bias 80 100 120 pf
EMIF10-1K010F1 3/6 v g1 b 21 g1 v fig. 3: digital crosstalk measurement. v(in1) v(out1) fig. 4: esd response to iec61000-4-2 (+15kv air discharge) on one input v(in) and on one output (vout). v(in1) v(out1) fig. 5: esd response to iec61000-4-2 (+15kv air discharge) on one input v(in) and on one output (vout). 12 510 0 10 20 30 40 50 60 70 80 90 100 vr(v) c(pf) f=1mhz vosc=30mv fig. 6: line capacitance versus applied voltage.
EMIF10-1K010F1 4/6 sub rsubump rsubump csubump csubump + + rsub ii gndi oi rgnd rseries model = demif10 model = demif10 sub rgnd rgnd rgnd lgnd lgnd lgnd cap_line cap_line port15 50 port16 50 50ph 50ph rs rs 50m 50m ls ls ii ii oi oi ++ lgnd + - lbump rbump lhole rhole gndi cap_hole + fig. 7: aplac model single line structure. aplacvar cz 57pf aplacvar rseries 960 aplacvar cap_line 0.8pf aplacvar ls 0.6nh aplacvar rbump 50m aplacvar lbump 50ph aplacvar rs 0.15 aplacvar csubump 15pf aplacvar rsubump 0.15 aplacvar rsub 0.1 aplacvar lhole 1.2nh opt aplacvar rhole 0.15 aplacvar cap_hole 0.15pf aplacvar rgnd 0.25 aplacvar ignd 0.4nh model demif10 bv = 7 ibv = 1m cjo = cz m = 0.3333 rs = 1 vj = 0.6 tt = 100n fig. 8: aplac model parameters. emif yy f x - xxx zz emi filter number of lines x: resistance value (ohms) z: capacitance value / 10(pf) or application (3 letters) and version (2 digits) flip chip 1: pitch = 500m bump = 315m 2: leadfree pitch = 500m bump = 315m 3: leadfree pitch = 400m bump = 250m 4: pitch = 500m bump = 250m order code
EMIF10-1K010F1 5/6 2.57mm 50m 2.57mm 50m 500m 50 315m 50 500m 50 250m 40 650m 65 package mechanical data flip chip 545 545 400 100 230 x y x w x w dot, st logo xxx = marking yww = datecode (y = year ww = week) all dimensions in m marking copper pad diameter : 250m recommended , 300m max solder stencil opening : 330m solder mask opening recommendation : 340m min for 315m copper pad diameter foot print recommendations
EMIF10-1K010F1 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not au- thorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2003 stmicroelectronics - all rights reserved. stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com dot identifying pin a1 location user direction of unreeling all dimensions in mm 4 +/- 0.1 8 +/- 0.3 4 +/- 0.1 1.75 +/- 0.1 3.5 +/- 0.1 ? 1.5 +/- 0.1 0.73 +/- 0.05 st xxx yww st xxx yww st xxx yww packing ordering code marking package weight base qty delivery mode EMIF10-1K010F1 fdt flip chip 9.2 mg 5000 tape & reel (7) other information note: more information are available in the application notes: - an1235: ''flip-chip: package description and recommandations for use'' - an1751: "emi filters: recommendations and measurements"
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